The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Sep. 30, 2013
Sandisk Technologies Inc., Plano, TX (US);
Feng Pan, Fremont, CA (US);
Jonathan Huynh, San Jose, CA (US);
Sung-En Wang, San Jose, CA (US);
Bo Lei, San Ramon, CA (US);
SanDisk Technologies Inc., Plano, TX (US);
Abstract
Techniques are presented for improving the efficiency of charge pumps. A charge pump, or a stage of a charge pump, provides its output through a pass gate. For example, this could be a charge pump of a voltage doubler type, where the output is supplied through pass gate transistors whose gates are connected to receive the output of an auxiliary section, also of a voltage doubler type of design. The waveforms provided to the gates of the pass gate transistors are modified so that their low values are offset to a higher value to take into account the threshold voltage of the pass gate transistors. In a voltage doubler based example, this can be implemented by way of introducing diodes into each leg of the auxiliary section.