The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Dec. 27, 2013
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Abstract
An embodiment, relates to a phase changeable memory cell. The phase changeable memory cell is formed with an ultra small contact area formed by filament conductive path. This contact area between a heating electrode and phase changeable material layer is determined by the forming of filament path, which is conductive and much smaller in cross-sectional area than the minimum area that can be achieved by lithography. This leads to high heating efficiency and ultra-low programming current. As the disclosed structure has no requirement on endurance for the formed filament and use phase changeable material rather than filament-forming material to provide high on/off resistance ratio, drawbacks of filament-forming material on low endurance and low sensing margin are avoided in the proposed cell structure. Therefore, by using ReRAM-related filament-forming materials to get sub-litho-dimension conductive path as heating electrode and using high on/off ratio phase changeable material as the storage media, it is possible to reduce the power consumption of phase changeable memory dramatically without the drawbacks of filament-forming materials that are shown in ReRAM.