Methods for manufacturing isolated deep trench and high-voltage led chip

Abstract

A method for manufacturing a deep isolation trench () and a method for manufacturing a high-voltage LED chip. Steps of the method for manufacturing a deep isolation trench () are as follows: forming a mask layer () on a substrate (), and forming, in the mask layer, through etching, multiple windows () isolated from each other, the bottom of each window exposing the substrate; with epitaxial lateral overgrowth, forming an epitaxial structure () inside each window and a part of the mask layer around the window, respectively, each epitaxial structure having a trapezoidal cross section with a long bottom and a short top, and a gap between adjacent epitaxial structures forming a first deep trench (); etching each epitaxial structure, forming a first shoulder () and a second shoulder () at both sides of each epitaxial structure, respectively, and forming a deep isolation trench above the mask layer between the adjacent epitaxial structures. The method for manufacturing a high-voltage LED chip is capable of decreasing preparation cost of the deep isolation trench in the high-voltage LED chip, and increasing continuity and compactness interconnection performance of an insulation isolation dielectric layer and an interconnection electrode layer between deep isolation trenches within a high-voltage LED chip.