The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Aug. 29, 2013
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Tatsunori Isogai, Yokohama, JP;
Tomonori Aoyama, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming a transistor including a gate insulator and a gate electrode on a substrate. The method further includes forming an interconnect structure including one or more interconnect layers on the substrate by performing first and second processes one or more times, the first process forming an interconnect layer on the substrate, and the second process processing the interconnect layer into an interconnect pattern. The method further includes annealing the substrate by irradiating the substrate with a microwave, after at least one interconnect layer included in the one or more interconnect layers is processed into an interconnect pattern on the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile