The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Oct. 03, 2011
Applicants:
Junichi Koike, Sendai, JP;
Akihiro Shibatomi, Sendai, JP;
Inventors:
Junichi Koike, Sendai, JP;
Akihiro Shibatomi, Sendai, JP;
Assignee:
Advanced Interconnect Materials, LLC, Miyagi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01K 3/10 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76864 (2013.01); H01L 21/76867 (2013.01); H01L 21/76873 (2013.01); H01L 23/53238 (2013.01); H01L 2221/1089 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/12044 (2013.01); Y10T 29/49163 (2015.01); Y10T 29/49165 (2015.01); Y10T 29/49204 (2015.01);
Abstract
A method for forming a copper interconnection structure includes the steps of forming an opening in an insulating layer, forming a copper alloy layer including a metal element on an inner surface of the opening, and conducting a heat treatment on the copper alloy layer so as to form a barrier layer. An enthalpy of oxide formation for the metal element is lower than the enthalpy of oxide formation for copper. The heat treatment is conducted at temperatures ranging from 327° C. to 427° C. and for a time period ranging from 1 minute to 80 minutes.