The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Jan. 30, 2013
Soitec, Crolles Cedex, FR;
Francois Boedt, Meylan, FR;
Sebastien Kerdiles, Saint Ismier, FR;
SOITEC, Bernin, FR;
Abstract
The invention relates to a process for thinning the active silicon layer of a substrate, which comprises an insulator layer between the active layer and a support, this process comprising one step of sacrificial thinning of active layer by formation of a sacrificial oxide layer by sacrificial thermal oxidation and deoxidation of the sacrificial oxide layer. The process is noteworthy in that it comprises: a step of forming a complementary oxide layer on the active layer, using an oxidizing plasma, this layer having a thickness profile complementary to that of oxide layer, so that the sum of the thicknesses of the oxide layer and of the sacrificial silicon oxide layer are constant over the surface of the treated substrate, a step of deoxidation of this oxide layer, so as to thin active layer by a uniform thickness.