The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Jan. 11, 2012
Masaki Shiraishi, Hitachinaka, JP;
Mutsuhiro Mori, Mito, JP;
Hiroshi Suzuki, Hitachi, JP;
SO Watanabe, Mito, JP;
Masaki Shiraishi, Hitachinaka, JP;
Mutsuhiro Mori, Mito, JP;
Hiroshi Suzuki, Hitachi, JP;
So Watanabe, Mito, JP;
Hitachi Power Semiconductor Device, Ltd., Hitachi-shi, JP;
Abstract
A semiconductor device includes first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type that is formed near a surface of the first semiconductor layer; a first main electrode that is electrically connected to the second semiconductor layer; a third semiconductor layer of the second conductivity type that neighbors the first semiconductor layer; a fourth semiconductor layer of the first conductivity type that is selectively disposed in an upper portion of the third semiconductor layer; a second main electrode that is electrically connected to the third semiconductor layer and the fourth semiconductor layer; a trench whose side face is in contact with the third semiconductor layer and the fourth semiconductor layer; a gate electrode that is formed along the side face of the trench by a sidewall of polysilicon; and a polysilicon electrode.