The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Dec. 24, 2013
Applicant:
Sandisk 3d Llc, Milpitas, CA (US);
Inventors:
Kang-Jay Hsia, Pleasanton, CA (US);
Calvin K. Li, Fremont, CA (US);
Christopher John Petti, Mountain View, CA (US);
Assignee:
SANDISK 3D LLC, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 27/10 (2006.01); H01L 27/102 (2006.01); H01L 29/868 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6609 (2013.01); H01L 27/101 (2013.01); H01L 27/1021 (2013.01); H01L 29/868 (2013.01); H01L 21/76802 (2013.01);
Abstract
A method of forming a memory cell is provided. The method includes forming a first pillar-shaped element that includes a first semiconductor material, forming a first opening self-aligned with the first pillar-shaped element, and depositing a second semiconductor material in the first opening to form a second pillar-shaped element above the first pillar-shaped element. Other aspects are also provided.