The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Nov. 05, 2012
Applicant:
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, Kanagawa, JP;
Inventor:
Hiroshi Kawakubo, Yokohama, JP;
Assignee:
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Yokohama-shi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/36 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/36 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/32 (2013.01); H01L 24/06 (2013.01); H01L 24/29 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/06519 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48599 (2013.01); H01L 2224/48644 (2013.01); H01L 2224/48699 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/16195 (2013.01); H01L 2924/3511 (2013.01);
Abstract
A semiconductor device includes: a substrate comprised by gallium arsenide; an active layer provided on the substrate; a first nickel-plated layer provided on a lower face of the substrate facing the active layer; a copper-plated layer provided on a lower face of the first nickel-plated layer; and a second nickel-plated layer provided on a lower face of the copper-plated layer.