The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Feb. 04, 2013
Micron Technology, Inc., Boise, ID (US);
David J. Keller, Boise, ID (US);
Alex Schrinsky, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The critical dimension (CD) of features formed during the fabrication of a semiconductor device may be controlled through the use of a dry develop chemistry comprising O, SOand a hydrogen halide. For example, a dry develop chemistry comprising a gas comprising Oand a gas comprising SOand a gas comprising HBr may be used to remove exposed areas of a carbon-based mask. The addition of HBr to the conventional Oand SOdry develop chemistry enables a user to tune the critical dimension by growing, trimming and/or sloping the sidewalls and to enhance sidewall passivation and reduce sidewall bowing.