The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Aug. 21, 2013
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Hiroshi Sunamura, Kanagawa, JP;
Kishou Kaneko, Kanagawa, JP;
Naoya Furutake, Kanagawa, JP;
Shinobu Saitou, Kanagawa, JP;
Yoshihiro Hayashi, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
A semiconductor device is provided which includes an N-type semiconductor layer and a P-type semiconductor layer coexisting in the same wiring layer without influences on the properties of a semiconductor layer. The semiconductor device includes a first wiring layer with a first wiring, a second wiring layer with a second wiring, and first and second transistors provided in the first and second wiring layers. The first transistor includes a first gate electrode, a first gate insulating film, a first oxide semiconductor layer, a first hard mask layer, and first insulating sidewall films covering the sides of the first oxide semiconductor layer. The second transistor includes a second gate electrode, a second gate insulating film, a second oxide semiconductor layer, and a second hard mask layer.