The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

May. 18, 2012
Applicants:

Minoru Osada, Ibaraki, JP;

Yasuo Ebina, Ibaraki, JP;

Takayoshi Sasaki, Ibaraki, JP;

Inventors:

Minoru Osada, Ibaraki, JP;

Yasuo Ebina, Ibaraki, JP;

Takayoshi Sasaki, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/10 (2006.01); H01L 49/02 (2006.01); B82Y 30/00 (2011.01); H01L 21/02 (2006.01); B32B 18/00 (2006.01); C04B 35/495 (2006.01); C04B 35/626 (2006.01); C01G 33/00 (2006.01); H01L 21/8234 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01G 4/10 (2013.01); B32B 18/00 (2013.01); B82Y 30/00 (2013.01); C01G 33/006 (2013.01); C04B 35/495 (2013.01); C04B 35/62685 (2013.01); H01L 21/02197 (2013.01); H01L 21/02285 (2013.01); H01L 28/56 (2013.01); C01P 2002/34 (2013.01); C01P 2004/24 (2013.01); C04B 2235/3201 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/768 (2013.01); C04B 2237/34 (2013.01); C04B 2237/345 (2013.01); C04B 2237/704 (2013.01); H01L 21/823462 (2013.01); H01L 27/0805 (2013.01); Y10T 156/10 (2015.01);
Abstract

A high dielectric nanosheet laminate is produced by laminating nanosheets, each of which has a thickness of 10 nm or less and is formed of an oxide that has a perovskite structure wherein at least four NbOoctahedrons, TaOoctahedrons or TiOoctahedrons are included in a unit lattice. Consequently, the high dielectric nanosheet laminate is capable of achieving a high dielectric constant and a satisfactory insulation property, which are preferable for high dielectric nanosheet multilayer capacitors or the like, at the same time even if formed very thin.


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