The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9076963 B1

Date of Patent:

Jul. 07, 2015

Filed:

May. 20, 2014

Phase change memory cells and methods of forming phase change memory cells

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Damon E. Van Gerpen, Kuna, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John, P.S.

Primary Examiner:

David Nhu

Int. Cl.

CPC ...

H01L 27/148 (2006.01); H01L 29/768 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);

U.S. Cl.

CPC ...

H01L 45/1286 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/144 (2013.01); H01L 45/1683 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01);

Abstract

A phase change memory cell includes a first electrode having a cylindrical portion. A dielectric material having a cylindrical portion is longitudinally over the cylindrical portion of the first electrode. Heater material is radially inward of and electrically coupled to the cylindrical portion of the first electrode. Phase change material is over the heater material and a second electrode is electrically coupled to the phase change material. Other embodiments are disclosed, including methods of forming memory cells which include first and second electrodes having phase change material and heater material in electrical series there-between.

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