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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9076837 B1

PDFFull Text
Expired
Date of Patent:
Jul. 07, 2015

Filed:

Jul. 06, 2012

Lateral insulated gate bipolar transistor structure with low parasitic bjt gain and stable threshold voltage

Applicants:

Long-shih Lin, Zhubei, TW;

Kun-ming Huang, Taipei, TW;

Ming-yi Lin, Hsinchu, TW;

Inventors:

Long-Shih Lin, Zhubei, TW;

Kun-Ming Huang, Taipei, TW;

Ming-Yi Lin, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., , TW;

Attorney:

Lowe Hauptman & Ham, LLP

Primary Examiner:

Michael Shingleton

Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7394 (2013.01); H01L 29/66325 (2013.01); H01L 29/42368 (2013.01); H01L 29/0634 (2013.01); H01L 29/0696 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01);
Abstract

A metal-oxide-semiconductor laterally diffused device (HV LDMOS), particularly a lateral insulated gate bipolar junction transistor (LIGBT), and a method of making it are provided in this disclosure. The device includes a silicon-on-insulator (SOI) substrate having a drift region, two oppositely doped well regions in the drift region, two insulating structures over and embedded in the drift region and second well region, a gate structure, and a source region in the second well region over a third well region embedded in the second well region. The third well region is disposed between the gate structure and the second insulating structure.

Find Patent Forward Citations

Lin, Long-Shih. (2015). Lateral insulated gate bipolar transistor structure with low parasitic bjt gain and stable threshold voltage (U.S. Patent No. 9076837). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9076837

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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