The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Jan. 06, 2014
Applicant:
Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;
Inventors:
Assignee:
SOCIONEXT INC., Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01); H01L 23/552 (2006.01); H01L 23/66 (2006.01); H01L 25/18 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/5384 (2013.01); H01L 23/552 (2013.01); H01L 23/66 (2013.01); H01L 25/18 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48235 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/15174 (2013.01); H01L 2924/15184 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/30107 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/3025 (2013.01); H01L 23/49827 (2013.01); H01L 24/48 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19105 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/16235 (2013.01);
Abstract
A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.