The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Aug. 23, 2013
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Sih-Han Li, New Taipei, TW;

Pei-Ling Tseng, Miaoli County, TW;

Zhe-Hui Lin, Changhua County, TW;

Chih-Sheng Lin, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/93 (2006.01); H01L 23/48 (2006.01); H01L 27/08 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 27/0808 (2013.01); H01L 29/93 (2013.01); H01L 29/94 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A varactor is provided. A substrate includes a first surface, a second surface and a first opening and a second opening in the substrate. A conductive material is filling the first and second openings, to form a first through-wafer via (TWV) and a second through-wafer via. A first capacitor is coupled between the first through-wafer via and a first terminal. A second capacitor is coupled between the second through-wafer via and a second terminal. A capacitance of a depletion-region capacitor between the first through-wafer via and the second through-wafer via is determined by a bias voltage applied to the first through-wafer via and the second through-wafer via.


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