The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Jan. 10, 2013
United Microelectronics Corp., Hsin-Chu, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, a metal gate structure, at least an epitaxial layer, an interlayer dielectric, at least a contact hole, at least a metal silicide layer and a fluorine-containing layer. The semiconductor substrate has at least a gate region and at least a source/drain region adjoining the gate region. The gate structure is disposed on the semiconductor substrate within the gate region. The epitaxial layer is disposed on the semiconductor substrate within the source/drain region. The interlayer dielectric covers the semiconductor substrate, the gate structure and the epitaxial layer. The contact hole penetrates the interlayer dielectric to reach the epitaxial layer. The metal silicide layer is formed in the epitaxial layer and is located on the bottom of the contact hole. The fluorine-containing layer is disposed on or in the epitaxial layer and is around sides of the metal silicide layer.