The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Apr. 07, 2014
Applicant:
Fuji Electric Co., Ltd., Kawasaki, JP;
Inventor:
Yasushi Niimura, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/46 (2006.01); H01L 21/78 (2006.01); H01L 21/301 (2006.01); H01L 21/263 (2006.01); H01L 21/28 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/263 (2013.01); H01L 21/28 (2013.01); H01L 22/14 (2013.01);
Abstract
A semiconductor device manufacturing method is disclosed by which electron beam irradiation is accomplished at a low cost while exhibiting uniform characteristics. A wafer stack consisting of multiple stacked wafers is irradiated with an electron beam from both the front surface and reverse surface. As such, a semiconductor device manufacturing method is provided whereby the electrical characteristics are extremely uniform between wafers, and costs are reduced by reducing the number of electron beam irradiations.