The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Oct. 18, 2011
Brett W. Busch, Boise, ID (US);
Mingtao LI, Boise, ID (US);
Jennifer Lequn Liu, Boise, ID (US);
Kevin R. Shea, Boise, ID (US);
Belford T. Coursey, Boise, ID (US);
Jonathan T. Doebler, Boise, ID (US);
Brett W. Busch, Boise, ID (US);
Mingtao Li, Boise, ID (US);
Jennifer Lequn Liu, Boise, ID (US);
Kevin R. Shea, Boise, ID (US);
Belford T. Coursey, Boise, ID (US);
Jonathan T. Doebler, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.