The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Aug. 06, 2013
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Badih El-Kareh, Cedar Park, TX (US);
Leonard Forbes, Corvallis, OR (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 21/8232 (2006.01); H01L 21/84 (2006.01); H01L 27/085 (2006.01); H01L 27/092 (2006.01); H01L 27/098 (2006.01); H01L 27/12 (2006.01); H01L 29/808 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0617 (2013.01); H01L 29/7832 (2013.01); H01L 21/8232 (2013.01); H01L 21/845 (2013.01); H01L 27/085 (2013.01); H01L 27/0922 (2013.01); H01L 27/098 (2013.01); H01L 27/1211 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/8086 (2013.01);
Abstract
Methods, devices, and systems integrating Fin-JFETs and Fin-MOSFETs are provided. One method embodiment includes forming at least on Fin-MOSFET on a substrate and forming at least on Fin-JFET on the substrate.