The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
May. 30, 2013
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Keisuke Suzuki, Nirasaki, JP;
Kentaro Kadonaga, Nirasaki, JP;
Volker Hemel, Dresden, DE;
Bernhard Zobel, Dresden, DE;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); C23C 16/345 (2013.01); C23C 16/45512 (2013.01); C23C 16/45525 (2013.01); C23C 16/45561 (2013.01);
Abstract
A method of forming a thin film on a surface of target objects in a vacuum-evacuable processing chamber by using a source gas and a reaction gas includes: forming a mixed gas by mixing the source gas and an inert gas in a gas reservoir tank, and supplying the mixed gas and the reaction gas into the processing chamber.