The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Feb. 03, 2012
Applicants:

Roy E. Scheuerlein, Cupertino, CA (US);

Eliyahou Harari, Saratoga, CA (US);

Inventors:

Roy E. Scheuerlein, Cupertino, CA (US);

Eliyahou Harari, Saratoga, CA (US);

Assignee:

SanDisk 3D LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); G11C 13/00 (2006.01); G11C 17/16 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0007 (2013.01); G11C 13/0004 (2013.01); G11C 13/0011 (2013.01); G11C 17/16 (2013.01); G11C 2213/19 (2013.01); G11C 2213/32 (2013.01); G11C 2213/34 (2013.01); G11C 2213/35 (2013.01); G11C 2213/52 (2013.01); G11C 2213/72 (2013.01); H01L 27/2409 (2013.01); H01L 27/2481 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/14 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/149 (2013.01); H01L 45/1675 (2013.01);
Abstract

A three-dimensional non-volatile memory system is disclosed including a memory array utilizing shared pillar structures for memory cell formation. A shared pillar structure includes two non-volatile storage elements. A first end surface of each pillar contacts one array line from a first set of array lines and a second end surface of each pillar contacts two array lines from a second set of array lines that is vertically separated from the first set of array lines. Each pillar includes a first subset of layers that are divided into portions for the individual storage elements in the pillar. Each pillar includes a second subset of layers that is shared between both non-volatile storage elements formed in the pillar. The individual storage elements each include a steering element and a state change element.


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