The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Oct. 01, 2013
Applicant:

Hoya Corporation, Tokyo, JP;

Inventors:

Atsushi Kominato, Tokyo, JP;

Masahiro Hashimoto, Tokyo, JP;

Hiroyuki Iwashita, Tokyo, JP;

Assignee:

HOYA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/50 (2012.01); G03F 1/58 (2012.01); G03F 1/00 (2012.01); G03F 1/74 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/50 (2013.01); Y10T 428/24942 (2015.01); G03F 1/58 (2013.01); G03F 1/00 (2013.01); G03F 1/74 (2013.01); G03F 7/2006 (2013.01);
Abstract

A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF excimer laser exposure light is disclosed. The mask blank has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has an at least two-layer structure including a lower layer and an upper layer from the transparent substrate side. The lower layer is made of a material composed of a transition metal, silicon, and nitrogen and having a nitrogen content of 21 at % or more and a refractive index n of 1.9 or less. The upper layer is made of a material composed of a transition metal, silicon, and nitrogen and having a refractive index n of 2.1 or less. A surface layer of the upper layer contains oxygen and has a nitrogen content of 14 at % or more.


Find Patent Forward Citations

Loading…