The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Feb. 29, 2008
Applicants:
Gunnar Leibiger, Freiberg, DE;
Frank Habel, Freiberg, DE;
Stefan Eichler, Dresden, DE;
Inventors:
Assignee:
FREIBERGER COMPOUND MATERIALS GMBH, Frieberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/02 (2006.01); C30B 25/00 (2006.01); C30B 25/14 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 25/00 (2013.01); Y10T 117/10 (2015.01); Y10T 428/24612 (2015.01); C30B 25/02 (2013.01); C30B 25/14 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01);
Abstract
A semiconductor compound material, preferably a III-N-bulk crystal or a III-N-layer, is manufactured in a reactor by means of hydride vapor phase epitaxy (HVPE), wherein in a mixture of carrier gases a flow profile represented by local mass flow rates is formed in the reactor. The mixture can carry one or more reaction gases towards a substrate. Thereby, a concentration of hydrogen important for the reaction and deposition of reaction gases is adjusted at the substrate surface independently from the flow profile simultaneously formed in the reactor.