The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2015

Filed:

Apr. 13, 2012
Applicant:

S. Brad Herner, San Jose, CA (US);

Inventor:

S. Brad Herner, San Jose, CA (US);

Assignee:

GTAT Corporation, Merrimack, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/0236 (2006.01); H01L 31/028 (2006.01); H01L 31/0392 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0236 (2013.01); H01L 31/028 (2013.01); Y02E 10/548 (2013.01); H01L 31/03921 (2013.01); H01L 31/1804 (2013.01); H01L 31/1892 (2013.01); Y02E 10/547 (2013.01);
Abstract

It is advantageous to create texture at the surface of a photovoltaic cell to reduce reflection and increase travel length of light within the cell. A method is disclosed to create texture at the surface of a silicon body by reacting a silicide-forming metal at the surface, where the silicide-silicon interface is non-planar, then stripping the silicide, leaving behind a textured surface. Depending on the metal and the conditions of silicide formation, the resulting surface may be faceted. The peak-to-valley height of this texturing will generally be between about 300 and about 5000 angstroms, which is well-suited for use in photovoltaic cells comprising a thin silicon lamina.


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