The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Feb. 15, 2010
Ralf Lerner, Erfurt, DE;
Phil Hower, Dallas, TX (US);
Gabriel Kittler, Ilmenau, DE;
Klaus Schottmann, Drei Gleichen, DE;
Ralf Lerner, Erfurt, DE;
Phil Hower, Dallas, TX (US);
Gabriel Kittler, Ilmenau, DE;
Klaus Schottmann, Drei Gleichen, DE;
X-FAB Semiconductor Foundries AG, , DE;
Texas Instruments Inc, Dallas, TX (US);
Abstract
A depletion type DMOS transistor comprises a gap in electrode material allowing incorporation of a well dopant species into the underlying semiconductor material. During subsequent dopant diffusion a continuous well region is obtained having an extended lateral extension without having an increased depth. The source dopant species is implanted after masking the gap. Additional channel implantation is performed prior to forming the gate dielectric material.