The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Dec. 17, 2013
Samsung Electronics Co., Ltd., Suwon-si, KR;
Pil-Kyu Kang, Anyang-si, KR;
Taeyeong Kim, Suwon-si, KR;
Byung Lyul Park, Seoul, KR;
Jumyong Park, Yongin-si, KR;
Jinho Park, Yongin-si, KR;
Kyu-Ha Lee, Yongin-si, KR;
Deok-Young Jung, Seoul, KR;
Gilheyun Choi, Seoul, KR;
Abstract
A conductive via of a semiconductor device is provided extending in a vertical direction through a substrate, a first end of the conductive via extending through a first surface of the substrate, so that the first end protrudes in the vertical direction relative to the first surface of the substrate. An insulating layer is provided on the first end of the conductive via and on the first surface of the substrate. An upper portion of a mask layer pattern is removed so that a capping portion of the insulating layer that is on the first end of the conductive via is exposed. A portion of the insulating layer at a side of, and spaced apart from, the conductive via, is removed, to form a recess in the insulating layer. The capping portion of the insulating layer on the first end of the conductive via is simultaneously removed.