The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2015

Filed:

Dec. 13, 2013
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventor:

John F. Stumpf, Kettering, OH (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/76 (2006.01); H01L 21/30 (2006.01); H01L 21/762 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/67011 (2013.01); H01L 21/67155 (2013.01);
Abstract

In one embodiment, a method for forming a direct fusion bond between fractional components of a semiconductor laminate structure can include generating one or more direct bonding surfaces on each of a plurality of semiconductor wafers. A first fractional component and a second fractional component can be cut from at least one of the plurality of semiconductor wafers. A second direct bonding surface of the second fractional component can be placed into contact with a first direct bonding surface of the first fractional component to define an initial contact area. An angle of approach between the second direct bonding surface of the second fractional component and the first direct bonding surface of the first fractional component can be closed to create a direct fusion bond of a semiconductor laminate structure. The direct fusion bond can be larger than the initial contact area.


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