The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Jun. 19, 2013
Inotera Memories, Inc., Taoyuan County, TW;
Tzung-Han Lee, Taipei, TW;
Yaw-Wen Hu, Taoyuan County, TW;
Chung-Yuan Lee, Taoyuan County, TW;
Hsu Chiang, New Taipei, TW;
Sheng-Hsiung Wu, Taipei, TW;
Hung Chang Liao, Taipei, TW;
Inotera Memories, Inc., Taoyuan County, TW;
Abstract
A memory unit includes a substrate, at least one charge storage element, at least one first recessed access element, and an isolation portion. The substrate has a surface and the first recessed access element is disposed in an active area of the substrate and extending from the surface into the substrate. The first recessed access element is electrically connected to the charge storage element and induces in the substrate a first depletion region. The isolation portion is adjacent to the active area and extending from the surface into the substrate. The isolation portion includes a trenched isolating barrier and a second recessed access element. The second recessed access element is disposed in the trenched isolating barrier and induces in the substrate a second depletion region merging with the first depletion region.