The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Apr. 13, 2012
Jian-bin Shiu, Hsinchu County, TW;
Tung-sheng Lee, Hsinchu, TW;
Jian-Bin Shiu, Hsinchu County, TW;
Tung-Sheng Lee, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A monitoring method of a semiconductor process includes the following steps. A semiconductor substrate is provided, and a test structure is formed thereon. The method of forming the test structure includes the following steps. A first doped region and a second doped region are formed in the semiconductor substrate, and an insulating layer is formed on the semiconductor substrate. Subsequently, a conductive layer is directly formed on the insulating layer to complete the formation of the test structure, in which the conductive layer in a floating state partially overlaps the first doped region and partially overlaps the second doped region. Then, a voltage signal is applied to the test structure and the breakdown voltage (Vbd) between the first doped region and the second doped region is measured.