The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Dec. 26, 2013
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31055 (2013.01); H01L 21/0214 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 23/291 (2013.01); H01L 21/02359 (2013.01);
Abstract
A method of fabricating a semiconductor device is provided. A substrate is provided. Thereafter, a dielectric layer is formed on the substrate, wherein the dielectric layer includes a first portion adjacent to the substrate and a second portion adjacent to the first portion. Afterwards, the dielectric layer is treated with nitrogen trifluoride (NF) to remove the second portion of the dielectric layer and therefore expose the first portion of the dielectric layer. A semiconductor device is also provided.