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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9070633 B1

PDFFull Text
Date of Patent:
Jun. 30, 2015

Filed:

May. 21, 2014

Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Roy C. Nangoy, Santa Clara, CA (US);

Saravjeet Singh, Santa Clara, CA (US);

Jon C. Farr, Tempe, AZ (US);

Sharma V. Pamarthy, Fremont, CA (US);

Ajay Kumar, Cupertino, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Patterson & Sheridan, LLP

Primary Examiner:

Roberts Culbert

Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32449 (2013.01); H01L 21/30655 (2013.01); C23C 16/45508 (2013.01); C23C 16/45563 (2013.01); C23C 16/45574 (2013.01); C23C 16/45587 (2013.01); C23C 16/45591 (2013.01); C23C 16/505 (2013.01); H01J 37/3211 (2013.01); H01J 37/3222 (2013.01); H01J 37/32458 (2013.01); H01L 21/67069 (2013.01);
Abstract

Embodiments of the present disclosure relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present disclosure provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.

Find Patent Forward Citations

Nangoy, Roy. (2015). Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor (U.S. Patent No. 9070633). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9070633

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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