The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Aug. 08, 2013
Applicant:
Hitachi Metals, Ltd., Tokyo, JP;
Inventor:
Tadayoshi Tsuchiya, Ishioka, JP;
Assignee:
HITACHI METALS, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/205 (2006.01); H01L 21/02 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 21/0254 (2013.01); H01L 21/02579 (2013.01); H01L 21/02581 (2013.01); H01L 21/0262 (2013.01); H01L 29/7783 (2013.01); H01L 29/1075 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01);
Abstract
A nitride semiconductor wafer includes a substrate, and a buffer layer formed on the substrate and including an alternating layer of AlGaN (0≦x≦0.05) and AlGaN (0<y≦1 and x<y) layers. Only the AlGaN layer in the alternating layer is doped with an acceptor.
Quick Actions:
Tsuchiya, Tadayoshi. (2015). Nitride semiconductor wafer for a high-electron-mobility transistor and its use (U.S. Patent No. 9070619). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9070619
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile