The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Mar. 15, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Josef Lutz, Chemnitz, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/423 (2006.01); H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 29/45 (2006.01); H01L 27/06 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 29/1608 (2013.01); H01L 29/66333 (2013.01); H01L 2924/0002 (2013.01); H01L 27/0629 (2013.01); H01L 29/417 (2013.01); H01L 29/7396 (2013.01); H01L 29/0834 (2013.01);
Abstract
A power switching module includes a three-terminal power semiconductor device designed for a rated current and a freewheeling unit. The freewheeling unit includes a pn-diode integrated in a first semiconductor material having a first band-gap, and a Schottky-diode integrated in a second semiconductor material having a second band-gap that is larger than the first band-gap. The Schottky-diode is electrically connected in parallel to the pn-diode.