The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Aug. 23, 2013
Qualcomm Incorporated, San Diego, CA (US);
Benjamin John Bowers, Cary, NC (US);
James W. Hayward, Raleigh, NC (US);
Charanya Gopal, Raleigh, NC (US);
Gregory Christopher Burda, Raleigh, NC (US);
Robert J. Bucki, Raleigh, NC (US);
Chock H. Gan, San Diego, CA (US);
Giridhar Nallapati, San Diego, CA (US);
Matthew D. Youngblood, Raleigh, NC (US);
William R. Flederbach, Holly Springs, NC (US);
Qualcomm Incorporated, San Diego, CA (US);
Abstract
A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.