The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2015

Filed:

Jun. 06, 2012
Applicants:

Bipul C. Paul, Fishkill, NY (US);

Randy W. Mann, Milton, NY (US);

Anurag Mittal, Wappingers Falls, NY (US);

Inventors:

Bipul C. Paul, Fishkill, NY (US);

Randy W. Mann, Milton, NY (US);

Anurag Mittal, Wappingers Falls, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5063 (2013.01); G06F 17/5036 (2013.01);
Abstract

A method includes designating a cell mismatch parameter of a memory cell including a plurality of transistors and an initial value of a transistor mismatch parameter for each of the plurality of transistors. A critical current sensitivity parameter is determined for each of the plurality of transistors based on the transistor mismatch parameters in a computing apparatus. The cell mismatch parameter is distributed across the plurality of transistors in the computing apparatus to update the individual transistor mismatch parameters for each of the plurality of transistors based on the critical current sensitivity parameters and the cell mismatch parameter. The memory cell is simulated based on the individual transistor mismatch parameters to generate a simulation result.


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