The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Mar. 06, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Atsushi Konno, Mie-ken, JP;

Masaru Kito, Mie-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 21/28282 (2013.01);
Abstract

According to an embodiment, in a method of fabricating a nonvolatile semiconductor memory device, second trenches penetrating the first and second conductive layers above the first trenches are formed to reach the stack, and a second insulating layer is formed on the second trenches and the first insulating layer so as to fill the second trenches. A part of the second insulating layer in a first region extending in a direction orthogonal to a direction that the first and second semiconductor pillars extend in a plane parallel to the back gate layer is removed while a part of the second insulating layer in a second region adjacent to the first region is left. The first sacrificial layer is selectively removed, and the first conductive layers and second conductive layers exposed in the first and second trenches are silicidized.


Find Patent Forward Citations

Konno, Atsushi. (2015). Nonvolatile semiconductor memory device and method of fabricating the same (U.S. Patent No. 9064969). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9064969

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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