The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Sep. 18, 2013
Applicant:

Globalfoundries, Inc., Grand Cayman, KY;

Inventors:

Joanna Wasyluk, Dresden, DE;

Carsten Reichel, Dresden, DE;

Joachim Patzer, Langebueck, DE;

Kai Wurster, Dresden, DE;

Assignee:

GLOBAL FOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 27/088 (2013.01); H01L 21/02694 (2013.01); H01L 21/02532 (2013.01); H01L 29/66636 (2013.01);
Abstract

Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a cavity in a semiconductor region laterally adjacent to a gate electrode structure. An EPI strain-inducing fill is deposited into the cavity. The EPI strain-inducing fill includes a main SiGe layer and a Si cap that overlies the main SiGe layer. The EPI strain-inducing fill is doped with boron and has a first peak boron content in an upper portion of the EPI strain-inducing fill of about 2.5 times or greater than an average boron content in an intermediate portion of the main SiGe layer.


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