The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Jun. 12, 2013
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/402 (2013.01); H01L 29/404 (2013.01); H01L 29/66666 (2013.01); H01L 29/0611 (2013.01); H01L 29/66477 (2013.01); H01L 29/7811 (2013.01); H01L 29/66712 (2013.01); H01L 29/0607 (2013.01); H01L 29/0619 (2013.01); H01L 29/0615 (2013.01); H01L 29/0638 (2013.01); H01L 29/0634 (2013.01); H01L 29/063 (2013.01);
Abstract
A semiconductor device includes a semiconductor body having a drift zone of a first conductivity type and a drift control zone. A junction termination structure is at a first side of the semiconductor body. A first dielectric is between the drift zone and the drift control zone. A second dielectric is at a second side of the semiconductor body. The drift control zone includes a first drift control subregion of the first conductivity type and a second drift control subregion of a second conductivity type between the first drift control subregion and the second dielectric.