The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9064939 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 23, 2015

Filed:

Jul. 02, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chung-Ying Yang, Taoyuan, TW;

Hsien-Wei Chen, Sinying, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/768 (2006.01); H01L 23/58 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76895 (2013.01); H01L 22/34 (2013.01); H01L 23/585 (2013.01); H01L 23/564 (2013.01); H01L 2924/0002 (2013.01); H01L 22/32 (2013.01);
Abstract

A method of making an integrated circuit including forming a seal ring structure around a circuit where the seal ring structure has a first portion and a tilted portion. The first portion of the seal ring structure is substantially parallel with an edge of the circuit. The tilted portion of the seal ring structure forms an obtuse angle with the first portion. The method further includes forming a first pad which is electrically coupled with the seal ring structure. The method further includes disposing a leakage current test structure in an area enclosed by the seal ring where at least one portion of the leakage current test structure is substantially parallel with the tilted portion of the seal ring structure. The method further includes forming a second pad which is electrically coupled with the leakage current test structure.


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