The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Jul. 11, 2013
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Atsushi Murakoshi, Kanagawa-ken, JP;
Daisuke Matsushita, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66825 (2013.01); H01L 27/11563 (2013.01); H01L 29/792 (2013.01); H01L 29/66833 (2013.01); H01L 27/11521 (2013.01);
Abstract
According to one embodiment, a semiconductor memory device includes a semiconductor member, a first insulating layer provided on the semiconductor member, a TaN layer provided on the first insulating layer and containing tantalum and nitrogen, a TaSiN layer provided on the TaN layer in contact with the TaN layer and containing tantalum, silicon, and nitrogen, a second insulating layer provided on the TaSiN layer in contact with the TaSiN layer and containing oxygen, and a control electrode provided on the second insulating layer.