The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Aug. 30, 2011
Wen Chu Hsiao, Tainan, TW;
Ju Wen Hsiao, Tainan, TW;
Ying Min Chou, Tainan, TW;
Hsiang Hsiang Ko, Sinying, TW;
Ying-lang Wang, Tien-Chung Village, TW;
Wen Chu Hsiao, Tainan, TW;
Ju Wen Hsiao, Tainan, TW;
Ying Min Chou, Tainan, TW;
Hsiang Hsiang Ko, Sinying, TW;
Ying-Lang Wang, Tien-Chung Village, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure and method for forming the same provide a high mobility stressor material suitable for use as source/drain regions or other active devices. The structure is formed in a substrate opening and is doped with an impurity such as boron in upper portions but is void of the impurity in regions that contact the surfaces of the opening. The structure is therefore resistant to out-diffusion of the dopant impurity during high temperature operations and may be formed through selective deposition using reduced pressure chemical vapor deposition or reduced pressure epitaxial deposition.