The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Nov. 05, 2013
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jinsu Kim, Kyung-Ki-Do, KR;

Xiaosong Ji, Milpitas, CA (US);

Jinhan Choi, San Ramon, CA (US);

Ho Jeong Kim, San Jose, CA (US);

Byungkook Kong, San Ramon, CA (US);

Hoon Sang Lee, Hwasung, KR;

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01);
Abstract

Embodiments of methods for etching a substrate include exposing the substrate to a first plasma formed from an inert gas; exposing the substrate to a second plasma formed from an oxygen-containing gas to form an oxide layer on a bottom and sides of a low aspect ratio feature and a high aspect ratio feature, wherein the oxide layer on the bottom of the low aspect ratio feature is thicker than on the bottom of the high aspect ratio feature; etching the oxide layer from the bottom of the low and high aspect ratio features with a third plasma to expose the bottom of the high aspect ratio feature while the bottom of the low aspect ratio feature remains covered; and exposing the substrate to a fourth plasma formed from a halogen-containing gas to etch the bottom of the low aspect ratio feature and the high aspect ratio feature.


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