The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Mar. 14, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

James P. Di Sarro, Essex Junction, VT (US);

Robert J. Gauthier, Jr., Hinesburg, VT (US);

Tom C. Lee, Essex Junction, VT (US);

Junjun Li, Williston, VT (US);

Souvick Mitra, Essex Junction, VT (US);

Christopher S. Putnam, Essex Junction, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 23/5228 (2013.01); H01L 28/24 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Various embodiments include dual three-dimensional (3D) resistor structures and methods of forming such structures. In some embodiments, a dual 3D resistor structure includes: a dielectric layer having a first set of trenches extending in a first direction through the dielectric layer; and a second set of trenches overlayed on the first set of trenches, the second set of trenches extending in a second direction through the dielectric layer, the second set of trenches and the first set of trenches forming at least one dual 3D trench; and a resistor material overlying the dielectric layer and at least partially filling the at least one dual 3D trench along the first direction and the second direction.


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