The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Aug. 22, 2012
Jin-seong Heo, Seoul, KR;
Hyun-jong Chung, Hwaseong-si, KR;
Hyun-jae Song, Hwaseong-si, KR;
Seong-jun Park, Seoul, KR;
David Seo, Yongin-si, KR;
Hee-jun Yang, Seoul, KR;
Jin-Seong Heo, Seoul, KR;
Hyun-jong Chung, Hwaseong-si, KR;
Hyun-jae Song, Hwaseong-si, KR;
Seong-jun Park, Seoul, KR;
David Seo, Yongin-si, KR;
Hee-jun Yang, Seoul, KR;
Abstract
According to example embodiments, a graphene switching devices has a tunable barrier. The graphene switching device may include a gate substrate, a gate dielectric on the gate substrate, a graphene layer on the gate dielectric, a semiconductor layer and a first electrode sequentially stacked on a first region of the graphene layer, and a second electrode on a second region of the graphene layer. The semiconductor layer may be doped with one of an n-type impurity and a p-type impurity. The semiconductor layer may face the gate substrate with the graphene layer being between the semiconductor layer and the gate substrate. The second region of the graphene layer may be separated from the first region on the graphene layer.