The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Jul. 17, 2012
Applicants:

Chun-ting Kuo, Tainan, TW;

Kei-wei Chen, Tainan, TW;

Ying-lang Wang, Tien-Chung Village, TW;

Kuo-hsiu Wei, Tainan, TW;

Inventors:

Chun-Ting Kuo, Tainan, TW;

Kei-Wei Chen, Tainan, TW;

Ying-Lang Wang, Tien-Chung Village, TW;

Kuo-Hsiu Wei, Tainan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1464 (2013.01); H01L 27/14687 (2013.01); H01L 21/02087 (2013.01); H01L 21/0209 (2013.01);
Abstract

A method includes forming top metal lines over a semiconductor substrate, wherein the semiconductor substrate is a portion of a wafer having a bevel. When the top metal lines are exposed, an etchant is supplied on the bevel, wherein regions of the wafer sprayed with the etchant has an inner defining line forming a first ring having a first diameter. A trimming step is performed to trim an edge portion of the wafer, wherein an edge of a remaining portion of the wafer has a second diameter substantially equal to or smaller than the first diameter.


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