The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Aug. 13, 2010
Applicants:
Chih-chun Wang, Tainan County, TW;
Chun-feng Chen, Tainan County, TW;
Inventors:
Chih-Chun Wang, Tainan County, TW;
Chun-Feng Chen, Tainan County, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); H01L 21/02126 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01); H01L 21/0234 (2013.01);
Abstract
A semiconductor process of the present invention is described as follows. A substrate is provided, and a material layer is deposited on the substrate using an organic precursor as a reactant gas. A plasma treatment is conducted immediately after depositing the material layer, wherein plasma is continuously supplied during depositing the material layer and the plasma treatment. A pump-down step is conducted.