The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Aug. 12, 2012
Applicants:
Ho-yin Chen, Hsinchu County, TW;
Chih-huei HU, Miaoli County, TW;
Yu-hui Sung, Hsinchu County, TW;
Inventors:
Assignee:
Etron Technology, Inc., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/406 (2006.01); G11C 11/4076 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40615 (2013.01); G11C 11/4076 (2013.01);
Abstract
A method of operating a PSRAM includes selecting a bit on a word line of the PSRAM, keeping the word line on for a first predetermined duration after selecting the bit, writing a data into the bit in response to a write command, and keeping the word line on for a second predetermined duration after the write command ends.
Chen, Ho-Yin. (2015). Method of providing write recovery protection in psram and related device (U.S. Patent No. 9064601). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9064601
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile