The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Jul. 02, 2013
Sandisk Technologies Inc., Plano, TX (US);
Chris Nga Yee Avila, Saratoga, CA (US);
Gautam Ashok Dusija, Milpitas, CA (US);
Jian Chen, Menlo Park, CA (US);
Alexander Kwok-Tung Mak, Los Altos Hills, CA (US);
Seungpil Lee, San Ramon, CA (US);
Mrinal Kochar, San Jose, CA (US);
Pao-Ling Koh, Fremont, CA (US);
SanDisk Technologies Inc., Plano, TX (US);
Abstract
Data that is stored in a higher error rate format in a nonvolatile memory is backed up in a lower error rate format. Data to be stored may be transferred once to on-chip data latches where it is maintained while it is programmed in both the high error rate format and the low error rate format without being resent to the nonvolatile memory. High error rate format may be MLC format and programming in the high error rate format may program both lower page and upper page data together in a full sequence programming scheme that is suitable for handling high data volume.