The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Apr. 03, 2013
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventor:
Bruce A. Block, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/00 (2006.01); B82Y 20/00 (2011.01); G02B 6/12 (2006.01); G02B 6/122 (2006.01); H01L 31/105 (2006.01); H01L 31/108 (2006.01); H01L 31/0232 (2014.01);
U.S. Cl.
CPC ...
G02B 6/00 (2013.01); B82Y 20/00 (2013.01); G02B 6/12004 (2013.01); G02B 6/1226 (2013.01); H01L 31/105 (2013.01); H01L 31/1085 (2013.01); H01L 31/0232 (2013.01);
Abstract
A metal-semiconductor-metal (MSM) device couples light from an optical mode in a waveguide to a surface plasmon polarition (SPP) mode on an electrode surface of the MSM device. Once in an SPP mode, the absorption of light in the semiconductor can take place in a very small area. This may allow for a shrinking of the active detector area and allow for low capacitance, very short transit distance for the electrical carriers and allow for very low voltage devices and/or very high frequency.